InP-Based Materials and Devices: Physics and Technology
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  • Wiley

More About This Title InP-Based Materials and Devices: Physics and Technology

English

OSAMU WADA is Group Leader of FESTA Laboratories of The Femtosecond Technology Research Association, Tsukuba, Japan.

HIDEKI HASEGAWA is Director of the Research Center for Interface Quantum Electronics and Professor at Hokkaido University, Sapporo, Japan.

English

Demand for InP-Based Optoelectronic Devices and Systems (J. Yoshida).

Applications of InP-Based Transistors for Microwave and Millimeter- Wave Systems (M. Matloubian).

Material Physics of InP-Based Compound Semiconductors (Y. Takeda).

InP Bulk Crystal Growth and Characterization (D. Bliss).

Metal-Organic Chemical Vapor Deposition of InP-Based Materials (T. Fukui).

InP and Related Compound Growth Based on MBE Technologies with Gaseous Sources (H. Heinecke).

Physics and Technological Control of Surfaces and Interfaces of InP-Based Materials (H. Hasegawa).

Dry Process Technique for InP-Based Materials (K. Asakawa).

Heterostructure Field Effect Transistors and Circuit Applications (J. Dickmann).

Heterojunction Bipolar Transistors and Circuit Applications (H.-F. Chau & W. Liu).

Lasers, Amplifiers, and Modulators Based on InP-Based Materials (N. Dutta).

Photodiodes and Receivers Based on InP Materials (K. Taguchi).

Hybrid Integration and Packaging of InP-Based Optoelectronic Devices (W. Hunziker).

Index.
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