Handbook of III-V Heterojunction Bipolar Transistors
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More About This Title Handbook of III-V Heterojunction Bipolar Transistors
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WILLIAM LIU is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has published numerous papers, reviews, and chapter contributions on HBTs. He holds thirteen U.S. patents on device and circuit design in various HBT technologies. He is a senior member of the IEEE.
English
Basic Properties and Device Physics of III-V Materials.
Two-Terminal Heterojunction Devices.
D.C.
Current Gain.
Nonideal D.C.
Characteristics.
Thermal-Electrical Properties.
Collapse of Current Gain.
Failure Mechanisms and Reliability Issues.
Small-Signal Properties.
Epitaxial Layer Design.
Geometrical Layout Design.
Power Amplifier.
Distortion and Noise.
Switching Characteristics and Spice Models.
Transistor Fabrication.
Measured Transistor Performances.
Appendices.
Glossary of Symbols.
Index.
Two-Terminal Heterojunction Devices.
D.C.
Current Gain.
Nonideal D.C.
Characteristics.
Thermal-Electrical Properties.
Collapse of Current Gain.
Failure Mechanisms and Reliability Issues.
Small-Signal Properties.
Epitaxial Layer Design.
Geometrical Layout Design.
Power Amplifier.
Distortion and Noise.
Switching Characteristics and Spice Models.
Transistor Fabrication.
Measured Transistor Performances.
Appendices.
Glossary of Symbols.
Index.
