Long-Wavelength Infrared Semiconductor Lasers
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More About This Title Long-Wavelength Infrared Semiconductor Lasers
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Long-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
English
HONG K. CHOI, PhD, is Chief Technology Officer at Kopin Corporation. Prior to joining Kopin, he was a senior staff member at MIT Lincoln Laboratory. He received his BS degree from Seoul National University, his MS degree from Korea Advanced Institute of Science and Technology, and his PhD from the University of California at Berkeley, all in electrical engineering. A Fellow of the IEEE, Dr. Choi has coauthored more than 100 papers and holds eight U.S. patents.
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Preface.
Acknowledgments.
Contributors.
1. Coherent Sources in the Long-Wavelength Infrared Spectrum(Hong K. Choi).
1.1 Introduction.
1.2 Synopsis of Long-Wavelength Coherent Sources.
1.3 Scope of Book.
2. 2-µm Wavelength Lasers Employing InP-basedStrained-Layer Quantum Wells (Manabu Mitsuhara and MamoruOishi).
2.1 Introduction.
2.2 Material Properties of InGaAsP.
2.3 Design Consideration of MQW Active Region.
2.4 Growth and Characterization of Strained-InGaAs QuantumWells.
2.5 Lasing Characteristics of 2-µm wavelength InGaAs-MQWLasers.
2.6 Conclusions and Future Prospects.
3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).
3.1 Introduction.
3.2 Antimonide III-V Material System.
3.3 Antimonide Lasers Emitting in the 2µm < lambda <3µm Range.
3.4 Antimonide Lasers Emitting in the lambda >= 3µmRange.
3.5 Challenges and Issues.
3.6 Conclusions.
4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe PeterSchieál, et al.).
4.1 Introduction.
4.2 Homostructure Lasers.
4.3 Double-Heterostructure Lasers.
4.4 Quantum-Well Lasers.
4.5 DFB and DBR Lasers.
4.6 IV-VI Epitaxy on BaF2 and Silicon.
4.7 Conclusion.
5. InP and GaAs-Based Quantum Cascade Lasers (JérômeFaist and Carco Sirtori).
5.1 Introduction.
5.2 Quantum Cascade Laser Fundamentals.
5.3 Fundamentals of the Three-Quantum-Well Active-RegionDevice.
5.4 Waveguide and Technology.
5.5 High-Power, Room-Temperature Operation of Three-Quantum-WellActive Region Designs.
5.6 GaAs-Based QC Lasers.
5.7 Role of the Conduction-Band Discontinuity.
5.8 Spectral Characteristics of QC Lasers.
5.9 Distributed Feedback Quantum Cascade Lasers.
5.10 Microsctructured QC Lasers.
5.11 Outlook on Active Region Designs and Conclusions.
6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers(Erik Bründermann).
6.1 Introduction.
6.2 Hot-Hole Laser Model.
6.3 Laser Material Fabrication.
6.4 Technology.
6.5 Laser Emission.
6.6 Future Trends.
6.7 Summary.
7. Continous THz generation with Optical Heterodyning (J. C.Pearson, et al.).
7.1 Introduction.
7.2 Requirements for Photomixing Systems.
7.3 Design Trade-offs for Photomixers.
7.4 Antenna Design.
7.5 Applications.
7.6 Summary.
Index.
Acknowledgments.
Contributors.
1. Coherent Sources in the Long-Wavelength Infrared Spectrum(Hong K. Choi).
1.1 Introduction.
1.2 Synopsis of Long-Wavelength Coherent Sources.
1.3 Scope of Book.
2. 2-µm Wavelength Lasers Employing InP-basedStrained-Layer Quantum Wells (Manabu Mitsuhara and MamoruOishi).
2.1 Introduction.
2.2 Material Properties of InGaAsP.
2.3 Design Consideration of MQW Active Region.
2.4 Growth and Characterization of Strained-InGaAs QuantumWells.
2.5 Lasing Characteristics of 2-µm wavelength InGaAs-MQWLasers.
2.6 Conclusions and Future Prospects.
3. Antimonide Mid-IR Lasers (L.J. Olafsen, et al.).
3.1 Introduction.
3.2 Antimonide III-V Material System.
3.3 Antimonide Lasers Emitting in the 2µm < lambda <3µm Range.
3.4 Antimonide Lasers Emitting in the lambda >= 3µmRange.
3.5 Challenges and Issues.
3.6 Conclusions.
4. Lead-Chalcogenide-based Mid-Infrared Diode Lasers (Uwe PeterSchieál, et al.).
4.1 Introduction.
4.2 Homostructure Lasers.
4.3 Double-Heterostructure Lasers.
4.4 Quantum-Well Lasers.
4.5 DFB and DBR Lasers.
4.6 IV-VI Epitaxy on BaF2 and Silicon.
4.7 Conclusion.
5. InP and GaAs-Based Quantum Cascade Lasers (JérômeFaist and Carco Sirtori).
5.1 Introduction.
5.2 Quantum Cascade Laser Fundamentals.
5.3 Fundamentals of the Three-Quantum-Well Active-RegionDevice.
5.4 Waveguide and Technology.
5.5 High-Power, Room-Temperature Operation of Three-Quantum-WellActive Region Designs.
5.6 GaAs-Based QC Lasers.
5.7 Role of the Conduction-Band Discontinuity.
5.8 Spectral Characteristics of QC Lasers.
5.9 Distributed Feedback Quantum Cascade Lasers.
5.10 Microsctructured QC Lasers.
5.11 Outlook on Active Region Designs and Conclusions.
6. Widely Tunable Far-Infrared Hot-Hole Semiconductor Lasers(Erik Bründermann).
6.1 Introduction.
6.2 Hot-Hole Laser Model.
6.3 Laser Material Fabrication.
6.4 Technology.
6.5 Laser Emission.
6.6 Future Trends.
6.7 Summary.
7. Continous THz generation with Optical Heterodyning (J. C.Pearson, et al.).
7.1 Introduction.
7.2 Requirements for Photomixing Systems.
7.3 Design Trade-offs for Photomixers.
7.4 Antenna Design.
7.5 Applications.
7.6 Summary.
Index.
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"This book provides an effective means for getting up to speed onpractical long-wavelength lasers." (Optical & PhontonicsNews, October 2005)
"...pulls together a lot of information previously found inan eclectic assortment of journal articles and books. Highlyrecommended." (E-STREAMS, August 2005)
"...pulls together a lot of information previously found inan eclectic assortment of journal articles and books. Highlyrecommended." (E-STREAMS, August 2005)
